IGBTs (1.626 artikelen)

Maximum Continuous Collector Current = 41 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 166 W Package Type = TO-220 Mounting Type = Thr...

Infineon IGBTThe Infineon IGBT is a 3-pin N-channel TO-220 through-hole mount transistor. It has a current rating of 41A and a voltage rating of 600V 3rd generation reverse conducting IGBT optimize...

Maximum Continuous Collector Current = 38 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 1 Package Type = TO-220-3

Maximum Continuous Collector Current = 38 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 130 W Package Type = TO-220-3

Maximum Continuous Collector Current = 55 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = +/-20V Maximum Power Dissipation = 188 W Package Type = 188 Mounting Type = Thro...

Maximum Continuous Collector Current = 55 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = +/-20V Number of Transistors = 1 Package Type = 188 Mounting Type = Through Hole...

Maximum Continuous Collector Current = 62 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 30V Maximum Power Dissipation = 188 W Configuration = Single Channel Type = N Pi...

The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent fo...

Maximum Continuous Collector Current = 74 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 30V Maximum Power Dissipation = 255 W Configuration = Single Channel Type = N Pi...

The Infineon IKP40N65F5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.Factor 2.5 lower Qg Fac...

The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.High Efficiency Low Switching Losses Increased Reliabi...

Maximum Continuous Collector Current = 74 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 250 W Package Type = PG-TO220-3 Pin Cou...

Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 361 W Package Type = TO-247 Mounting Type = T...

IGBTs

The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage has fast recovery anti-parallel emitter controlled diode.High Efficiency Low Switching Los...