Transistor  (13.008 artikelen gevonden)

Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247 Pin Count = 3 Transistor Co...

Maximum Continuous Collector Current = 65 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±30V Number of Transistors = 1 Configuration = Single Collector, Single Emitter,...

Darlington Transistor Arrays, Texas Instruments. A range of Darlington transistor arrays from Texas Instruments suitable for a wide range of medium to high current driver applications.

Maximum Continuous Collector Current = 25 A Maximum Collector Emitter Voltage = 1350 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Ho...

The ROHM field stop trench IGBT mainly used in general inverter and for automotive and industrial use. The power dissipation is 267 watts.Low collector - emitter saturation voltage Short circuit wi...

Transistor Type = NPN Maximum Continuous Collector Current = 500 mA Maximum Collector Emitter Voltage = 50 V Package Type = SOIC Pin Count = 16 Number of Elements per Chip = 7

The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optim...

Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 267 W Package Type = TO-247N Pin Count = 3

Mounting Type = Surface Mount Output Device = IGBT, MOSFET Maximum Forward Voltage = 1.8V Number of Channels = 1 Number of Pins = 5 Package Type = SO Series = TLP

Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 108 W Package Type = TO-247 Pin Count = 4

Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Number of Transistors = 1 Configuration = Single Pin Count = 3

Power Management Function = IGBT Gate Driver Kit Classification = Demonstration Board Featured Device = STGAP1BS Kit Name = Demonstration Board

Transistor Type = NPN Maximum Collector Emitter Voltage = 50 V Package Type = SOIC Pin Count = 16 Number of Elements per Chip = 7

The STMicroelectronics high-speed HB2 series IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of co...

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 555 W Package Type = TO-247N Pin Count = 3