|  |
| |
| Artikelnr.:
3523E-1464442 Fabrikantnr.:
SI3476DV-T1-GE3 EAN/GTIN:
5059040665095 |
| |
|
| | |
| Channel Type = N
Maximum Continuous Drain Current = 4.6 A
Maximum Drain Source Voltage = 80 V
Package Type = SOT-23
Mounting Type = Surface Mount
Pin Count = 6
Maximum Drain Source Resistance = 126 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 3V
Minimum Gate Threshold Voltage = 1.2V
Maximum Power Dissipation = 3.6 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±20 V
Maximum Operating Temperature = +150 °Cmm
Minimum Operating Temperature = -55 °Cmm Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 4.6 A | Maximum Drain Source Voltage: | 80 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 126 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 3.6 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.1mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| Andere zoekwoorden: 1464442, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI3476DVT1GE3 |
| | |
| |