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| Artikelnr.:
3523E-1531936 Fabrikantnr.:
PMXB75UPEZ EAN/GTIN:
5059043652214 |
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| 20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1.5 kV HBM Drain-source on-state resistance RDSon = 69 mΩ Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 2.9 A | Maximum Drain Source Voltage: | 20 V | Package Type: | DFN1010D-3, SOT1215 | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 950 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | -1V | Minimum Gate Threshold Voltage: | -0.4V | Maximum Power Dissipation: | 8330 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 8 V | Length: | 1.15mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1531936, Semiconductors, Discrete Semiconductors, MOSFETs, Nexperia, PMXB75UPEZ |
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