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| Artikelnr.: 3523E-1532892 Fabrikantnr.: PMCM4401VNEAZ EAN/GTIN: 5059043669045 |
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| N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.12V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Relay driver High-speed line driver Low-side loadswitch Switching circuits Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 6 A | Maximum Drain Source Voltage: | 12 V | Package Type: | WLCSP | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 120 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 0.9V | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 12.5 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 8 V | Length: | 0.81mm | Maximum Operating Temperature: | +150 °C |
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