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| Artikelnr.:
3523E-1653003 Fabrikantnr.:
SI4900DY-T1-GE3 EAN/GTIN:
5059040702394 |
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| Dual N-Channel MOSFET, Vishay Semiconductor Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 4.3 A | Maximum Drain Source Voltage: | 60 V | Package Type: | SOIC | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 58 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 2 W | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 5mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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| Andere zoekwoorden: MOSFET, MOSFET-transistor, 1653003, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SI4900DYT1GE3 |
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