|  |
| |
| Artikelnr.:
3523E-1655705 Fabrikantnr.:
IPB80P04P407ATMA1 EAN/GTIN:
5059043468440 |
| |
|
| | |
| Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 80 A | Maximum Drain Source Voltage: | 40 V | Package Type: | D2PAK (TO-263) | Series: | OptiMOS P | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 7.7 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 88 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10mm |
|
| | |
| | | |
| Andere zoekwoorden: 1655705, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB80P04P407ATMA1 |
| | |
| |