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N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2

Aantal:

verpakking

Productinformatie

Artikelnr.:
3523E-1660942

Merk:
ST Microelectronics

Fabrikantnr.:
STB18N60DM2

EAN/GTIN:
5059042263589

Zoekwoorden:

Power-transistor
MOSFET
MOSFET-transistor

N-Channel MDmesh DM2 Series, STMicroelectronics. The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified

Meer informatie:


Channel Type:	N
Maximum Continuous Drain Current:	12 A
Maximum Drain Source Voltage:	600 V
Package Type:	D2PAK (TO-263)
Series:	MDmesh DM2
Mounting Type:	Surface Mount
Pin Count:	3
Maximum Drain Source Resistance:	290 mΩ
Channel Mode:	Enhancement
Maximum Gate Threshold Voltage:	5V
Minimum Gate Threshold Voltage:	3V
Maximum Power Dissipation:	90 W
Transistor Configuration:	Single
Maximum Gate Source Voltage:	-25 V, +25 V
Length:	9.35mm