| ![](/p.gif) |
![](/p.gif) |
| Artikelnr.: 3523E-1684578 Fabrikantnr.: IXFN360N15T2 EAN/GTIN: 5059041902304 |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 310 A | Maximum Drain Source Voltage: | 150 V | Package Type: | SOT-227 | Series: | GigaMOS TrenchT2 HiperFET | Mounting Type: | Screw Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 4 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 2.5V | Maximum Power Dissipation: | 1.07 kW | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 38.23mm | Maximum Operating Temperature: | +175 °C |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Andere zoekwoorden: 1684578, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXFN360N15T2 |
| ![](/p.gif) | ![](/p.gif) |
| |