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| Artikelnr.:
3523E-1684578 Fabrikantnr.:
IXFN360N15T2 EAN/GTIN:
5059041902304 |
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| N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 310 A | Maximum Drain Source Voltage: | 150 V | Package Type: | SOT-227 | Series: | GigaMOS TrenchT2 HiperFET | Mounting Type: | Screw Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 4 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 2.5V | Maximum Power Dissipation: | 1.07 kW | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 38.23mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1684578, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXFN360N15T2 |
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