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| Artikelnr.:
3523E-1776115 Fabrikantnr.:
R6520ENX EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 20 A
Maximum Drain Source Voltage = 650 V
Series = R6520ENX
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 200 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Power Dissipation = 68 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±30 V
Width = 4.8mm
Height = 15.4mm Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 20 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-220FM | Series: | R6520ENX | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 200 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 68 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.3mm |
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| Andere zoekwoorden: 1776115, Semiconductors, Discrete Semiconductors, MOSFETs, ROHM, R6520ENX |
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