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| Artikelnr.: 3523E-1783725 Fabrikantnr.: SQM40022EM_GE3 EAN/GTIN: geen gegevens |
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![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 150 A Maximum Drain Source Voltage = 40 V Series = TrenchFET Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 3 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 3.5V Maximum Power Dissipation = 150 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Transistor Material = Simm Automotive Standard = AEC-Q101mm Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 150 A | Maximum Drain Source Voltage: | 40 V | Package Type: | D2PAK (TO-263) | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 7 | Maximum Drain Source Resistance: | 3 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 3.5V | Maximum Power Dissipation: | 150 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 10.67mm |
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![](/p.gif) | Andere zoekwoorden: 1783725, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay Siliconix, SQM40022EM_GE3 |
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