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| Artikelnr.:
3523E-1783726 Fabrikantnr.:
SQS944ENW-T1_GE3 EAN/GTIN:
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| TrenchFET® power MOSFET Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 6 A | Maximum Drain Source Voltage: | 40 V | Package Type: | PowerPAK 1212-8 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 40 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 1.5V | Maximum Power Dissipation: | 27.8 W | Maximum Gate Source Voltage: | ±20 V | Length: | 3.15mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1783726, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay Siliconix, SQS944ENWT1_GE3 |
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