|  |
| |
| Artikelnr.:
3523E-1784271 Fabrikantnr.:
FFSH40120ADN-F085 EAN/GTIN:
geen gegevens |
| |
|
| | |
| Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.Max Junction Temperature 175 °C Positive Temperature Coefficient No Reverse Recovery / No Forward Recovery Applications: Automotive HEV-EV Onboard Chargers Automotive HEV-EV DC-DC Converters End Products: Automotive HEV-EV Onboard Chargers Meer informatie: | | Mounting Type: | Through Hole | Package Type: | TO-247 | Maximum Continuous Forward Current: | 50A | Peak Reverse Repetitive Voltage: | 1200V | Diode Configuration: | Dual Common Cathode | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 3 | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky | Peak Non-Repetitive Forward Surge Current: | 1.19kA |
|
| | |
| | | |
| Andere zoekwoorden: Schottkydiode, 1784271, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, onsemi, FFSH40120ADNF085 |
| | |
| |