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| Artikelnr.:
3523E-1784651 Fabrikantnr.:
FFSD08120A EAN/GTIN:
5059045289333 |
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| Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.Max Junction Temperature 175 °C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery Applications PFC Industrial Power Solar EV Charger UPS Welding Meer informatie: | | Mounting Type: | Surface Mount | Package Type: | TO-252 | Maximum Continuous Forward Current: | 22.5A | Peak Reverse Repetitive Voltage: | 1200V | Diode Configuration: | Single | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 3 | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky | Peak Non-Repetitive Forward Surge Current: | 530A |
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