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| Artikelnr.:
3523E-1844881 Fabrikantnr.:
2N7000-D26Z EAN/GTIN:
5059045244264 |
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| These N-channel Small Signal MOSFETs are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.Voltage Controlled Small Signal Switch High Saturation Current Capability Rugged and Reliable High Density Cell Design for Low RDS(ON) Applications Small Servo Motor Control Power MOSFET Gate Drivers Assorted Switching Applications Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 200 mA | Maximum Drain Source Voltage: | 60 V | Package Type: | TO-92 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 9 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Minimum Gate Threshold Voltage: | 0.8V | Maximum Power Dissipation: | 400 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 5.2mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1844881, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, 2N7000D26Z |
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