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| Artikelnr.:
3523E-1858132 Fabrikantnr.:
NSVJ5908DSG5T1G EAN/GTIN:
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| Automotive JFET designed for compact and efficient designs and including high gain performance. JFET and PPAP capable suitable for automotive applications.Composite type with 2 JFET contained Large forward transfer admittance / yfs / and low noise figure NF The NSVJ5908DSG5 is formed with two chips, being equivalent to the NSVJ3557SA3, placed in MCPH5 package. Pb-Free, Halogen Free PPAP capable High power dissipation Realize low distortion Enabling the reception of radio waves in the small Improving the mounting efficiency greatly. Environmental Consideration Suitable for automotive application. Enabled for use under high temperature Applications AM Tuner RF Amplifier Low Noise Amplifier End Products Car Tuner Automotive Antenna Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 50 mA | Maximum Drain Source Voltage: | 15 V | Package Type: | MCPH | Mounting Type: | Surface Mount | Pin Count: | 5 | Maximum Power Dissipation: | 300 mW | Transistor Configuration: | Single | Length: | 2mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 | Width: | 1.6mm | Automotive Standard: | AEC-Q101 | Height: | 0.83mm | Minimum Operating Temperature: | -55 °C |
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| Andere zoekwoorden: MOSFET, MOSFET-transistor, 1858132, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NSVJ5908DSG5T1G |
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