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| Artikelnr.: 3523E-1858642 Fabrikantnr.: AFGB40T65SQDN EAN/GTIN: 5059045233565 |
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| Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 238 W Package Type = D2PAK Mounting Type = Surface Mount Channel Type = N Pin Count = 3 Transistor Configuration = Single Dimensions = 10.67 x 9.65 x 4.58mm Minimum Operating Temperature = -55 °CmJ Meer informatie: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 238 W | Number of Transistors: | 1 | Package Type: | D2PAK | Mounting Type: | Surface Mount | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single | Dimensions: | 10.67 x 9.65 x 4.58mm | Automotive Standard: | AEC-Q101 | Energy Rating: | 22.3mJ | Gate Capacitance: | 2495pF | Maximum Operating Temperature: | +175 °C |
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