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| Artikelnr.: 3523E-1859125 Fabrikantnr.: NVTFS6H888NTAG EAN/GTIN: 5059045641889 |
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![](/p.gif) | Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.Small Footprint (3.3 x 3.3 mm) Low On-Resistance Low Capacitance NVTFS6H850NWF − Wettable Flanks Product PPAP Capable Compact Design Minimizes Conduction Losses Minimize Driver Losses Enhanced Optical Inspection Suitable for Automotive Applications Applications Reverser Battery protection Power switches (High Side Driver, Low Side Driver, H-Bridges etc.) Switching power supplies End Products Solenoid Driver – ABS, Fuel injection Motor Control – EPS, Wipers, Fans, Seats, etc. Load Switch – ECU, Chassis, Body Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 12 A | Maximum Drain Source Voltage: | 80 V | Package Type: | WDFN | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 55 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 18 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.15mm | Maximum Operating Temperature: | +175 °C |
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![](/p.gif) | Andere zoekwoorden: 1859125, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVTFS6H888NTAG |
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