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| Artikelnr.:
3523E-1861280 Fabrikantnr.:
NVB072N65S3 EAN/GTIN:
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| SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.700 V @ TJ = 150°C Ultra Low Gate Charge (Typ. Qg = 78 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF) PPAP Capable Typ. RDS(on) = 63 mΩ Higher system reliability at low temperature operation Lower switching loss PPAP Capable Applications HV DC/DC converter End Products On Board Charger DC/DC Converter Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 44 A | Maximum Drain Source Voltage: | 650 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 107 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Minimum Gate Threshold Voltage: | 2.5V | Maximum Power Dissipation: | 312 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1861280, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVB072N65S3 |
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