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| Artikelnr.:
3523E-1867990 Fabrikantnr.:
FDS8958A EAN/GTIN:
5059045751137 |
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| These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.Q1: N-Channel 7.0 A, 30 V RDS(ON) = 28 mΩ @ VGS = 10 V RDS(ON) = 40 mΩ @ VGS = 4.5 V Q2: P-Channel -5 A,-30 V RDS(ON) = 52 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V Fast switching speed High power and handling capability in a widely used surface mount package Applications This product is general usage and suitable for many different applications. Meer informatie: | | Package Type: | SOIC | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 2 W | Pin Count: | 8 | Number of Elements per Chip: | 2 | Dimensions: | 4.9 x 3.9 x 1.58mm | Maximum Operating Temperature: | +150 °C | Length: | 4.9mm | Minimum Operating Temperature: | -55 °C | Width: | 3.9mm |
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| Andere zoekwoorden: Veldeffecttransistor, Power-transistor, SMD-transistor, SMD-transistors, Schakeltransistor, Schakeltransistors, Transistor, Transistors, dual transistor, 1867990, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, FDS8958A |
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