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| Artikelnr.:
3523E-1884960 Fabrikantnr.:
SiSS92DN-T1-GE3 EAN/GTIN:
5059045741060 |
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| N-Channel 250 V (D-S) MOSFET.TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss Leadership RDS(on) and RDS-Coss FOM Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 12.3 A | Maximum Drain Source Voltage: | 250 V | Package Type: | PowerPAK 1212-8S | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 190 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 65.8 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.3mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1884960, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSS92DNT1GE3 |
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