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| Artikelnr.:
3523E-1884970 Fabrikantnr.:
SIHA100N60E-GE3 EAN/GTIN:
5059045756095 |
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| Channel Type = N
Maximum Continuous Drain Current = 30 A
Maximum Drain Source Voltage = 600 V
Package Type = TO-220
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 100 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5V
Minimum Gate Threshold Voltage = 3V
Maximum Power Dissipation = 35 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±30 V
Width = 4.7mm
Height = 15.3mm Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 30 A | Maximum Drain Source Voltage: | 600 V | Package Type: | TO-220 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 100 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 35 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.3mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: mosfet 600v, 1884970, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHA100N60EGE3 |
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