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| Artikelnr.:
3523E-1885051 Fabrikantnr.:
SISS30LDN-T1-GE3 EAN/GTIN:
5059045838241 |
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| Channel Type = N
Maximum Continuous Drain Current = 55.5 A
Maximum Drain Source Voltage = 80 V
Package Type = PowerPAK 1212-8S
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 12 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 2.5V
Minimum Gate Threshold Voltage = 1V
Maximum Power Dissipation = 57 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±20 V
Width = 3.3mm
Height = 0.78mm Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 55.5 A | Maximum Drain Source Voltage: | 80 V | Package Type: | PowerPAK 1212-8S | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 12 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 57 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.3mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1885051, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISS30LDNT1GE3 |
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