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| Artikelnr.: 3523E-1885051 Fabrikantnr.: SISS30LDN-T1-GE3 EAN/GTIN: 5059045838241 |
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![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 55.5 A Maximum Drain Source Voltage = 80 V Package Type = PowerPAK 1212-8S Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 12 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 57 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 3.3mm Height = 0.78mm Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 55.5 A | Maximum Drain Source Voltage: | 80 V | Package Type: | PowerPAK 1212-8S | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 12 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 57 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.3mm | Maximum Operating Temperature: | +150 °C |
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![](/p.gif) | Andere zoekwoorden: 1885051, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISS30LDNT1GE3 |
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