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| Artikelnr.: 3523E-1885126 Fabrikantnr.: SUP40012EL-GE3 EAN/GTIN: 5059045811527 |
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![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 150 A Maximum Drain Source Voltage = 40 V Package Type = TO-220AB Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 2.3 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 150 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 4.65mm Height = 9.01mm Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 150 A | Maximum Drain Source Voltage: | 40 V | Package Type: | TO-220AB | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 2.3 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 150 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 10.51mm | Maximum Operating Temperature: | +175 °C |
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![](/p.gif) | Andere zoekwoorden: 1885126, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SUP40012ELGE3 |
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