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| Artikelnr.:
3523E-1888281 Fabrikantnr.:
STB12NM50T4 EAN/GTIN:
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| The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Tight process control and high manufacturing yields Low gate input resistance Applications Switching application Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 12 A | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 350 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 160 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.4mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 1888281, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STB12NM50T4 |
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