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| Artikelnr.:
3523E-1952503 Fabrikantnr.:
FCMT360N65S3 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 10 A
Maximum Drain Source Voltage = 650 V
Package Type = PQFN4
Mounting Type = Surface Mount
Pin Count = 4
Maximum Drain Source Resistance = 360 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4.5V
Minimum Gate Threshold Voltage = 2.5V
Maximum Power Dissipation = 83 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±30 V
Width = 8mm
Height = 1.05mm Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 10 A | Maximum Drain Source Voltage: | 650 V | Package Type: | PQFN4 | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 360 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Minimum Gate Threshold Voltage: | 2.5V | Maximum Power Dissipation: | 83 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 8mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1952503, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FCMT360N65S3 |
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