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| Artikelnr.:
3523E-1952513 Fabrikantnr.:
NVMYS3D3N06CLTWG EAN/GTIN:
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| Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard PPAP Capable These Devices are Pb−Free Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 133 A | Maximum Drain Source Voltage: | 60 V | Package Type: | LFPAK, SOT-669 | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 4.2 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 100 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 5mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1952513, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVMYS3D3N06CLTWG |
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