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| Artikelnr.:
3523E-1958715 Fabrikantnr.:
FFSD0865B-F085 EAN/GTIN:
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| Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & costMax Junction Temperature 175 °C PPAP capable High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery Applications Automotive HEV-EV Onboard Chargers Automotive HEV-EV DC-DC Converters Meer informatie: | | Mounting Type: | Surface Mount | Package Type: | DPAK | Maximum Continuous Forward Current: | 11.6A | Peak Reverse Repetitive Voltage: | 650V | Diode Configuration: | Single | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 3 | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky |
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