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| Artikelnr.:
3523E-2006797 Fabrikantnr.:
Si4425FDY-T1-GE3 EAN/GTIN:
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| Channel Type = P
Maximum Continuous Drain Current = 18.3 A
Maximum Drain Source Voltage = 30 V
Series = TrenchFET® Gen IV
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.016 Ω, 0.0095 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 2.2V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 18.3 A | Maximum Drain Source Voltage: | 30 V | Package Type: | SO-8 | Series: | TrenchFET® Gen IV | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.016 Ω, 0.0095 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.2V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2006797, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, Si4425FDYT1GE3 |
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