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| Artikelnr.:
3523E-2006812 Fabrikantnr.:
SIHH186N60EF-T1GE3 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 10 A, 16 A
Maximum Drain Source Voltage = 650 V
Series = EF
Mounting Type = Surface Mount
Pin Count = 4
Maximum Drain Source Resistance = 0.193 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 10 A, 16 A | Maximum Drain Source Voltage: | 650 V | Package Type: | PowerPAK 8 x 8 | Series: | EF | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 0.193 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2006812, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHH186N60EFT1GE3 |
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