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| Artikelnr.: 3523E-2006812 Fabrikantnr.: SIHH186N60EF-T1GE3 EAN/GTIN: geen gegevens |
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![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 10 A, 16 A Maximum Drain Source Voltage = 650 V Series = EF Mounting Type = Surface Mount Pin Count = 4 Maximum Drain Source Resistance = 0.193 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Number of Elements per Chip = 1 Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 10 A, 16 A | Maximum Drain Source Voltage: | 650 V | Package Type: | PowerPAK 8 x 8 | Series: | EF | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 0.193 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 1 |
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![](/p.gif) | Andere zoekwoorden: 2006812, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHH186N60EFT1GE3 |
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