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| Artikelnr.:
3523E-2006819 Fabrikantnr.:
SIHP186N60EF-GE3 EAN/GTIN:
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| The Vishay SIHP186N60EF-GE3 is a EF series power MOSFET with fast body diode.4th generation E series technology Low figure-of-merit Low effective capacitance Reduced switching and conduction losses Avalanche energy rated (UIS) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 12 A, 18 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-220AB | Series: | EF | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.193 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2006819, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHP186N60EFGE3 |
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