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| Artikelnr.:
3523E-2006847 Fabrikantnr.:
SISS50DN-T1-GE3 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 108 A
Maximum Drain Source Voltage = 45 V
Series = TrenchFET® Gen IV
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.0041 Ω, 0.00283 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 2.3V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 108 A | Maximum Drain Source Voltage: | 45 V | Package Type: | PowerPAK 1212-8S | Series: | TrenchFET® Gen IV | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0041 Ω, 0.00283 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.3V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2006847, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISS50DNT1GE3 |
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