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| Artikelnr.: 3523E-2006847 Fabrikantnr.: SISS50DN-T1-GE3 EAN/GTIN: geen gegevens |
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![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 108 A Maximum Drain Source Voltage = 45 V Series = TrenchFET® Gen IV Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 0.0041 Ω, 0.00283 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.3V Number of Elements per Chip = 1 Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 108 A | Maximum Drain Source Voltage: | 45 V | Package Type: | PowerPAK 1212-8S | Series: | TrenchFET® Gen IV | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0041 Ω, 0.00283 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.3V | Number of Elements per Chip: | 1 |
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![](/p.gif) | Andere zoekwoorden: 2006847, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISS50DNT1GE3 |
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