| ![](/p.gif) |
![](/p.gif) |
| Artikelnr.: 3523E-2006850 Fabrikantnr.: SQS484CENW-T1_GE3 EAN/GTIN: geen gegevens |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 16 A Maximum Drain Source Voltage = 40 V Series = AEC-Q101, Automotive, TrenchFET® Pin Count = 8 Maximum Drain Source Resistance = 0.011 Ω, 0.0095 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Number of Elements per Chip = 1 Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 16 A | Maximum Drain Source Voltage: | 40 V | Package Type: | PowerPAK 1212-8W | Series: | AEC-Q101, Automotive, TrenchFET® | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.011 Ω, 0.0095 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Number of Elements per Chip: | 1 |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Andere zoekwoorden: 2006850, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SQS484CENWT1_GE3 |
| ![](/p.gif) | ![](/p.gif) |
| |