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| Artikelnr.:
3523E-2025494 Fabrikantnr.:
SCTWA30N120 EAN/GTIN:
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| The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.Very fast and robust intrinsic body diode Low capacitance Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 45 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | HiP247 | Series: | SCT | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.09 Ω | Channel Mode: | Depletion | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 | Transistor Material: | SiC |
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| Andere zoekwoorden: 2025494, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, SCTWA30N120 |
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