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| Artikelnr.:
3523E-2047234 Fabrikantnr.:
SIDR392DP-T1-RE3 EAN/GTIN:
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| The Vishay N-Channel 30 V (D-S) MOSFET has a Top side cooling feature provides additional venue for thermal transfer. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.100 % Rg and UIS tested TrenchFET Gen IV power MOSFET Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 100 A | Maximum Drain Source Voltage: | 30 V | Package Type: | PowerPAK SO-8DC | Series: | SiDR392DP | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.00062 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.2V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2047234, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIDR392DPT1RE3 |
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