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| Artikelnr.:
3523E-2049878 Fabrikantnr.:
STGWA30H65DFB2 EAN/GTIN:
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| The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.Maximum junction temperature : TJ = 175 °C Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Meer informatie: | | Maximum Continuous Collector Current: | 50 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 167 W | Number of Transistors: | 1 | Package Type: | TO-247 | Pin Count: | 3 |
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