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| Artikelnr.:
3523E-2122094 Fabrikantnr.:
SCTWA40N120G2V-4 EAN/GTIN:
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| SiC MOSFETThe STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.Very low switching losses Low power losses at high temperatures Higher operating temperature (up to 200 ˚C) Body diode with no recovery losses Easy to drive Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 45 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | HiP247-4 | Series: | SCTWA40N120G2V-4 | Mounting Type: | Through Hole | Pin Count: | 4 | Maximum Drain Source Resistance: | 0.07 Ω | Transistor Material: | SiC |
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| Andere zoekwoorden: 2122094, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, SCTWA40N120G2V4 |
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