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| Artikelnr.:
3523E-2144384 Fabrikantnr.:
IPD60R180P7ATMA1 EAN/GTIN:
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| This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.It has rugged body diode Integrated RG reduces MOSFET oscillation sensitivity Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 18 A | Maximum Drain Source Voltage: | 600 V | Package Type: | DPAK (TO-252) | Series: | CoolMOS™ P7 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.18 Ω | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2144384, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD60R180P7ATMA1 |
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