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| Artikelnr.:
3523E-2149022 Fabrikantnr.:
IPB50N12S3L15ATMA1 EAN/GTIN:
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| The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.The product is Automotive AEC Q101 qualified 100% Avalanche tested It has 175°C operating temperature Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 50 A | Maximum Drain Source Voltage: | 120 V | Package Type: | D2PAK (TO-263) | Series: | OptiMOS™-T | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.0154 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2149022, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB50N12S3L15ATMA1 |
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