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| Artikelnr.:
3523E-2149110 Fabrikantnr.:
IPS80R900P7AKMA1 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 6 A
Maximum Drain Source Voltage = 800 V
Series = CoolMOS™ P7
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 0.9 O
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 3.5V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 6 A | Maximum Drain Source Voltage: | 800 V | Package Type: | IPAK (TO-251) | Series: | CoolMOS™ P7 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.9 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2149110, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPS80R900P7AKMA1 |
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