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| Artikelnr.: 3523E-2149119 Fabrikantnr.: IPW65R125C7XKSA1 EAN/GTIN: geen gegevens |
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![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 18 A Maximum Drain Source Voltage = 650 V Series = CoolMOS™ C7 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.125 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Number of Elements per Chip = 1 Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 18 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-247 | Series: | CoolMOS™ C7 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.125 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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![](/p.gif) | Andere zoekwoorden: 2149119, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPW65R125C7XKSA1 |
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