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| Artikelnr.:
3523E-2152459 Fabrikantnr.:
BSC034N03LSGATMA1 EAN/GTIN:
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| The Infineon OptiMOS™3 Power-MOSFET series has 30V maximum drain source voltage with SuperSO8 5x6 package type. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life. Available in half bridge configuration (power stage 5x6).Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 100 A | Maximum Drain Source Voltage: | 30 V | Package Type: | SuperSO8 5 x 6 | Series: | OptiMOS™ | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0051 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.2V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2152459, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSC034N03LSGATMA1 |
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