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| Artikelnr.:
3523E-2152530 Fabrikantnr.:
IPN80R2K0P7ATMA1 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 3 A
Maximum Drain Source Voltage = 700 V
Series = CoolMOS™
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 2 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 3.5V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 3 A | Maximum Drain Source Voltage: | 700 V | Package Type: | SOT-223 | Series: | CoolMOS™ | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 2 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2152530, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPN80R2K0P7ATMA1 |
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