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| Artikelnr.:
3523E-2155779 Fabrikantnr.:
FM24C04B-GTR EAN/GTIN:
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| The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Meer informatie: | | Memory Size: | 4kbit | Organisation: | 512 x 8 | Interface Type: | I2C | Data Bus Width: | 8bit | Maximum Random Access Time: | 10ns | Mounting Type: | Surface Mount | Package Type: | SOIC | Pin Count: | 8 | Dimensions: | 4.97 x 3.98 x 1.48mm | Length: | 4.97mm | Maximum Operating Supply Voltage: | 5.5 V | Width: | 3.98mm | Height: | 1.48mm | Maximum Operating Temperature: | +85 °C | Automotive Standard: | AEC-Q100 |
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| Andere zoekwoorden: 2155779, Semiconductors, Memory Chips, FRAM Memory, Infineon, FM24C04BGTR |
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