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| Artikelnr.: 3523E-2155866 Fabrikantnr.: 47L64-I/SN EAN/GTIN: geen gegevens |
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| The Microchip EERAM is an SRAM that doesnt lose its content on a power disruption. Inside each memory cell, transparent to the user, are non-volatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.8,192 x 8 bit Serial SRAM with internal non-volatile data backup I2C Interface: Up to 3MHz with Schmitt trigger inputs for noise suppression Low-Power CMOS Technology: Active current: 5 mA (maximum) Standby current: 500 μA (maximum) Hibernate current: 3 μA (maximum) Cell-Based Non-volatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time) Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, SRAM automatically restored on VCC return 100,000 Backups Minimum (at 20°C) 100 years retention (at 20°C) Meer informatie: | | Memory Size: | 64kbit | Organisation: | 8k x 8 bit | Number of Words: | 8k | Number of Bits per Word: | 8bit | Maximum Random Access Time: | 550ns | Clock Frequency: | 1MHz | Low Power: | Yes | Timing Type: | Synchronous | Mounting Type: | Surface Mount | Package Type: | SOIC-8 | Pin Count: | 8 | Dimensions: | 4.9 x 3.9 x 1.5mm | Height: | 1.5mm | Maximum Operating Supply Voltage: | 3.6 V | Length: | 4.9mm |
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| Andere zoekwoorden: 2155866, Semiconductors, Memory Chips, Microchip, 47L64ISN |
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