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| Artikelnr.: 3523E-2156639 Fabrikantnr.: IHW30N65R5XKSA1 EAN/GTIN: geen gegevens |
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![](/p.gif) | The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference Meer informatie: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 60 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 176 W | Package Type: | PG-TO247-3 | Pin Count: | 3 |
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![](/p.gif) | Andere zoekwoorden: Transistor, Transistors, 2156639, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IHW30N65R5XKSA1 |
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