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| Artikelnr.: 3523E-2156653 Fabrikantnr.: IKB40N65EH5ATMA1 EAN/GTIN: geen gegevens |
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![](/p.gif) | The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference Meer informatie: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 74 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20 V, ±30 V | Maximum Power Dissipation: | 333 W | Package Type: | PG-TO247-3 | Pin Count: | 3 |
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![](/p.gif) | Andere zoekwoorden: Transistor, Transistors, 2156653, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKB40N65EH5ATMA1 |
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