| ![](/p.gif) |
![](/p.gif) |
| Artikelnr.: 3523E-2156655 Fabrikantnr.: IKB40N65ES5ATMA1 EAN/GTIN: geen gegevens |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference Meer informatie: ![](/p.gif) | ![](/p.gif) | Maximum Continuous Collector Current: | 79 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20 V, ±30 V | Maximum Power Dissipation: | 230 W | Package Type: | PG-TO263-3 | Pin Count: | 3 |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Andere zoekwoorden: Transistor, Transistors, 2156655, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKB40N65ES5ATMA1 |
| ![](/p.gif) | ![](/p.gif) |
| |