|  |
| |
| Artikelnr.:
3523E-2172524 Fabrikantnr.:
IPD60R360P7SAUMA1 EAN/GTIN:
geen gegevens |
| |
|
| | |
| The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.600V P7 enables excellent FOM R DS(on)xE oss and R DS(on)xQ G ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 9 A | Maximum Drain Source Voltage: | 600 V | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 360 mO | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 |
|
| | |
| | | |
| Andere zoekwoorden: 2172524, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD60R360P7SAUMA1 |
| | |
| |