| ![](/p.gif) |
![](/p.gif) |
| Artikelnr.: 3523E-2182984 Fabrikantnr.: BSZ0589NSATMA1 EAN/GTIN: geen gegevens |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | The Infineon N-Channel Power MOSFET. This MOSFET is optimized for high performance Wireless charger.Low FOMSW for high frequency SMPS Very low on-resistance RDS(on) @ VGS=4.5 V 100% avalanche tested Superior thermal resistance Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 17 A | Maximum Drain Source Voltage: | 30 V | Package Type: | TSDSON-8 FL | Series: | OptiMOS™ 5 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0044 Ω | Maximum Gate Threshold Voltage: | 2V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Andere zoekwoorden: 2182984, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSZ0589NSATMA1 |
| ![](/p.gif) | ![](/p.gif) |
| |